features ? frequency range 5 ghz to 6 ghz p out maximum 28 dbm gain typically 19 db v cc 3.0v to 3.9v package: qfn16 current consumption in power down mode typically 15 a benefits biasing control extends battery life time simple input and output matching one single supply voltage required electrostatic sensitive device. observe precautions for handling. 1. description 1.1 process the 5-ghz power amplifier is designed using atmel?s silicon-germanium (sige) pro- cess and provides excellent noise performance as well as good power-added efficiency. 1.2 circuitry the pa consists of a 2-stage amplifier with a maximum output power of 28 dbm. the output stages were realized using an open-collector structure. the ic features 50- ? input matching. power-up/down and output level are controlled at bias control pin 6 (v ctl ). figure 1-1. block diagram matching bias control rfin 3 rfout 11 6 vctl 16 vcc_ctl vcc1 15 vcc2 13 atr7035 rfout 10 5.8 ghz wdct power amplifier atr7035 summary preliminary rev. 4577es?dect?10/05 note: this is a summary docu ment. a complete document is available under nda. for more information, please con- tact your local atmel sales office.
2 4577es?dect?10/05 atr7035 [preliminary] 3. package information 2. ordering information extended type number package remarks atr7035-pesg qfn16 tube, moq 750, pb-free ATR7035-PEQG qfn16 taped and reeled, moq 6000, pb-free
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